退火温度对掺铒硅1.54μm光致发光的影响  

Photoluminescence around 1.54μm wavelength from Erbium-doped silicon dependence on annealing temperature

作　　者：徐飞[1,2] 肖志松[3] 程国安[2] 易仲珍[3] 曾宇昕[2] 张通和[3] 顾岚岚[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室 [2]南昌大学材料科学与工程系 [3]北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学低能核物理研究所,北京市辐射中心,北京100875

出　　处：《核技术》2002年第8期631-636,共6页Nuclear Techniques

基　　金：国家自然科学基金 (6 976 6 0 0 1);复旦大学应用表面物理国家重点实验室资助

摘　　要：利用金属蒸气真空弧 (MEVVA)离子源将稀土金属Er离子注入单晶硅中 ,经快速退火制备出掺铒硅发光薄膜。RBS分析表明掺铒硅的浓度接近 10at% ,即可达 10 2 1cm- 3量级。XRD分析薄膜物相结构发现 ,退火温度升高将导致Er偏析。通过RHEED和AFM显微分析可得 ,退火温度影响辐照损伤的恢复程度、Si固相外延再结晶和显微形貌。这些结构变化将影响掺铒硅发光薄膜1.5 4μm光致发光。Er ions were implanted into Si substrates using metal vapor vacuum arc (MEVVA) ion source implanter, and Er-doped Si thin films have been formed after rapid thermal annealing (RTA). It was analyzed by Rutherford back-scattering spectroscopy (RBS) that Er concentrations in the thin films were close to 10at% corresponding to the level of ～10 21 atoms/cm 3 and Er segregation in the surface layer of the thin films appeared with increasing the temperature of RTA. The recovery of irradiation damage, Er segregation and Si solid phase epitaxy of Si amorphous layers were closely dependent on annealing temperature, which would influence on photoluminescence around 1.54μm from Er-doped Si thin film.

关 键 词：退火温度 离子注入 掺铒硅 快速退火 光致发光 半导体材料 结构 发光薄膜 发光材料 

分 类 号：TN304.12[电子电信—物理电子学] O484.3[理学—固体物理]