1.5微米波段GaAs基异变InAs量子点分子束外延生长  

Molecular Beam Epitaxial Growth of 1.5μm Wavelength GaAs Based Metamorphic InAs Quantum Dots

作　　者：魏全香[1] 王鹏飞[2] 任正伟[2] 贺振宏[2] 

机构地区：[1]山西大学物理电子工程学院,山西太原030006 [2]中国科学院半导体研究所,北京100083

出　　处：《材料科学与工程学报》2014年第6期816-820,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(90921015)

摘　　要：1.55微米波段GaAs基近红外长波长材料在光纤通讯,高频电路和光电集成等领域有潜在的应用价值。本文用分子束外延方法研究了GaAs基异变InAs量子点材料的生长,力图实现在拓展量子点发光波长的同时保持或增加InAs量子点的密度。在实验中,首先优化了In0.15GaAs异变缓冲层的生长,研究了生长温度和退火对减少穿通位错的作用。在此基础上,优化了长波长InAs量子点的生长。最终在GaAs基上获得了温室发光波长在1491nm,半高宽为27.73meV,密度达到4×1010cm-2的InAs量子点。1.55μm GaAs based near-infrared long wavelength materials has potential applications in the field of optical fiber communication,high frequency circuit and optoelectronic integration.The paper studies the GaAs based metamorphic InAs quantum dots(QDs)grown by molecular beam epitaxy.We tried to expand the luminescence wavelength of quantum dots and to increase the density of InAs QDs at the same time.In the experiment,we optimized the growth of the In0.15 GaAs metamorphic buffer layer.The growth temperature and annealing parameters were optimized to reduce threading dislocations.The long wavelength InAs quantum dots were grown on this buffer layer.Finally,we obtained the GaAs based InAs QDs with photoluminescence wavelength at 1491 nm,their full width at half maximum of the PL peak is about 27.73 meV,and the density is around 4×1010cm-2.

关 键 词：异变 INAS量子点 分子束外延 发光波长 

分 类 号：TN304.054[电子电信—物理电子学]