全方位离子注入及增强沉积工业机和应用  

Industrial plasma immersion ion implanter and its applications

作　　者：童洪辉[1] 陈庆川[1] 霍岩峰[1] 王珂[1] 穆莉兰[1] 冯铁民[1] 赵军[1] 严兵[1] 耿漫[1] 

机构地区：[1]核工业西南物理研究院,成都610041

出　　处：《核技术》2002年第9期684-689,共6页Nuclear Techniques

摘　　要：报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。A new generation industrial plasma immersion ion implanter was developed recently in Southwestern Institute of Physics and some experimental results are reported in this paper. The vacuum chamber with 900 mm in diameter and 1050 mm in height stands vertically. The pumping system includes turbo-pump and mechanical pump and it can be automatically controlled by PLC. The background pressure is less than 4×10 -4 Pa. The plasma in the chamber can be generated by hot-filament discharge and three high-efficiency magnetic filter metal plasma sources, so that the plasma immersion ion implantation and enhanced deposition can be done. The maximum pulse voltage output is 80kV, maximum pulse current is 60A, repetition frequency is 50-500Hz, and the pulse rise time is less than 2μs. The power modulator can operate in the pulse bunching mode if necessary. In general, the plasma density is 10 8-10 10 cm -3 , the film deposition rate is 0.1-0.5nm/s?

关 键 词：增强沉积工业机 全方位离子注入 金属等离子体源 表面改性 金属材料 

分 类 号：TG174.444[金属学及工艺—金属表面处理]