ZnO压敏陶瓷晶粒间界效应  

Grain Boundary Effect of ZnO Voltage Sensitive Ceramic

作　　者：朱梓英[1] 雷德铭[1] 李景德[1] 

机构地区：[1]中山大学物理学系

出　　处：《中山大学学报（自然科学版）》1991年第2期160-162,共3页Acta Scientiarum Naturalium Universitatis Sunyatseni

摘　　要：利用正电子湮灭技术研究了氧化锌的非线性电阻效应。由短寿命τ_1及其成份I_1随电流i变化曲线同压降曲线的相似性证明该成份属于传导电子和正电子的湮灭。实验结果支持Schot-tky势垒模型对晶粒间界提供的压敏效应的解释。Positron annihilation techenique has been used to study the non-linear Ohmic effect of ZnO.The resemblence of curve,which represending the short life-time τ_1 and its component I_1 vs.current i with the voltage drop curve proves that, this component I_1 belongs to the annihilation of transporting electron and positron. The experimental results give support to the explaination of Schottky barrier model for the effect of intergranular boundary.

关 键 词：ZNO 压敏陶瓷 晶粒间界 导电机构 

分 类 号：TM28[一般工业技术—材料科学与工程]