勾形磁场下多晶硅定向凝固模拟与分析  

Numerical Simulation and Analysis of Directional Solidification of Multi-crystalline Silicon under Cusp-shaped Magnetic Field

作　　者：罗玉峰[1,2,3] 刘杰[1] 张发云 饶森林 胡云 

机构地区：[1]南昌大学机电工程学院,南昌330031 [2]新余学院新能源科学与工程学院,新余338004 [3]江西省高等学校硅材料重点实验室,新余338004

出　　处：《人工晶体学报》2016年第1期110-114 127,127,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51164033);江西省自然科学基金(20132BAB206021);江西省高等学校科技落地计划项目(KJLD12050);江西省教育厅科学技术研究项目(11739;12748)

摘　　要：利用基于有限元的软件COMSOL Multiphysics对多晶硅定向凝固过程进行了一系列二维数值模拟,研究了勾形磁场(CMF)对多晶硅定向凝固过程的影响。模拟分别在线圈电流设为0 A、10 A、20 A、30 A和40 A的情况下进行。结果表明:CMF能有效抑制熔体的对流,特别是对坩埚侧壁附近的熔体。CMF可以影响结晶时的固液界面,使结晶初期凸形结晶界面变得平滑。电流从0 A逐渐均匀增加到40 A时,施加于熔体上的磁场也逐渐增加,熔体的最高流速逐渐减小,而且最高流速的减小量呈现出先增加后减小的趋势。A series of two-dimensional numerical simulations were conducted by COMSOL Multiphysics,which is the software based on finite element method,to understand the effects of cusp-shaped magnetic field( CMF) on the process of the directional solidification of multi-crystalline silicon. Numerical calculations were carried out while the current of coils were respectively set as: 0 A,10 A,20 A,30 A and40 A. It is found that CMF can effectively suppress the melt flow,especially for the melt near the side wall of the crucible. CMF can affect the solid-liquid interface during crystallization and make the convex interface to be more smooth at the initial stage of crystallization. When the current of coils are gradually increased from 0 A to 40 A,the magnetic field applied to the melt gradually increases,the maximum flow rate of the melt decreases,and the amount of the reduction of the maximum flow rate has the trend that it increases at first and then decreases.

关 键 词：定向凝固 磁场 熔体对流 数值模拟 多晶硅 

分 类 号：O78[理学—晶体学]