半导体瞬态问题特征变网格有限元法和分析  

A MOVING GRID FINITE ELEMENT METHOD ALONG CHARACTERISTICS FOR SEMICONDUCTOR DEVICE

作　　者：杨青[1] 

机构地区：[1]山东师范大学数学系,济南250014

出　　处：《高等学校计算数学学报》2002年第3期193-198,共6页Numerical Mathematics A Journal of Chinese Universities

基　　金：国家自然科学基金资助项目;国家教育部博士点基金资助项目.

摘　　要：The mathematical model of semiconductor device is described by aparabolic-elliptic coupled system. A time-dependent variable grid characteristicfinite element method is introduced and analyzed for the initial boundary valueproblem of this system. The optimal convergence rate in L2 is obtained with someminor constraints. A numerical experiment is presented.The mathematical model of semiconductor device is described by a parabolic-elliptic coupled system. A time-dependent variable grid characteristic finite element method is introduced and analyzed for the initial boundary value problem of this system. The optimal convergence rate in L2 is obtained with some minor constraints. A numerical experiment is presented.

关 键 词：半导体 瞬态问题 变网格有限元法 

分 类 号：O471[理学—半导体物理] O241.8[理学—物理]