透明导电氧化物薄膜的新进展  

New Progress of Transparent Conductive Oxide Thin Films

作　　者：孟扬[1] 沈杰[1] 蒋益明[1] 陈佾[1] 孔令柱[1] 沃松涛[1] 杨锡良[1] 陈华仙[1] 章壮健[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《光电子技术》2002年第3期125-130,144,共7页Optoelectronic Technology

摘　　要：透明导电氧化物（TCO）薄膜In2O3:Sn和SnO。2:F都已经发展成熟,分别大规模应用于平板显示器和建筑两大领域。最近几年,TCO薄膜的研究又进入了一次复兴时期,研究和开发出几类具有明显特色的新型TCO薄膜。ZnO基TCO薄膜有替代In2O3:Sn薄膜的趋势;多元TCO薄膜材料可以调整其性能来满足某些特殊应用的需求;具有高载流子迁移率的In2O3:Mo薄膜为进一步提高TCO薄膜的性能打开了一条新路;真正的p型TCO薄膜为制造透明电子元器件迈出了第一步。Transparent conductive oxide (TCO) thin films In2O3 : Sn and SnO2 : F have been used commonly in two dominant markets of flat-panel displays and architectural applications respectively. Recently, technology of TCO films has been a renaissance. Some new TCO films were researched and developed. Impurity-doped ZnO films are expected to be alternative materials for In2O3 : Sn. The properties of multicomponent TCO films can meet the requirements of specialized applications. High-mobility In2O3 : Mo film improves the properties of TCO films in another way. True p-type semiconductor TCO films give the possibility to develop transparent electronic devices.

关 键 词：TCO 透明导电氧化物 薄膜 进展 

分 类 号：TN304.055[电子电信—物理电子学]