光电子材料铝镓铟磷的椭偏研究  

Study on the Optoelectronical Materials AlGaInP by Ellipsometric Spectroscopy

作　　者：连洁[1] 王青圃[1] 魏爱俭[1] 李平[1] 王玉荣[1] 张晓阳[2] 秦晓燕[2] 

机构地区：[1]山东大学信息科学与工程学院,济南250100 [2]山东大学晶体材料所,济南250100

出　　处：《山东大学学报（理学版）》2002年第4期324-328,共5页Journal of Shandong University(Natural Science)

基　　金："8 6 3"计划资助项目 ( 86 3 -71 5 -0 0 1 -0 1 71 ) ;山东大学青年科学基金资助项目 .

摘　　要：在室温下 ,运用反射椭偏光谱技术 ,对生长在砷化镓上的铝镓铟磷以及铝镓铟磷 (掺硅 )两样品进行了研究 .测得它们在可见光区的光学常数 ,求得吸收系数、介电函数随光子能量的变化关系 .对样品的介电函数虚部谱进行数值微分 ,得到它们的三级微商谱 .通过对样品的吸收系数谱和介电函数虚部的三级微商谱的分析 ,得到两样品的带隙Eg,Eg+Δ0 和Eg 以上成对结构跃迁的能量位置及间隔 .将Eg 和Eg+Δ0 的值与计算值和已发表的值比较 ,符合较好 ,但存在小的差异 .分析发现 ,样品存在有序结构是引起差异的主要原因 .根据椭偏测量的数据 ,用有效介质近似理论计算了样品中铝的组分 ,并与X射线微区分析的测量结果加以比较 ,二者一致 .AlGaInP and that doped Si grown on the GaAs substrates were studied by using the reflection ellipsometric spectroscopy at room temperature. Optical constants for two samples were measured in the visible light region. Dependence of the absorption coefficients and dielectric functions on the photon energy was obtained for two samples. The third derivative spectra of the imaginary part of dielectric functions for two samples were evaluated by the numerical differentiation. The band gaps E g, E g+Δ 0 and the gap of the paired structure above E g were gained by analyzing the above spectra respectively. The values of E g and E g+Δ 0 were in agreement with the theoretical and published data,but there was a certain difference between them. Moreover, it was found the main reason of causing difference was the existence of ordered structure of two samples. In addition, the Al contents of the samples were calculated by means of effective medium approximation theory, and the results were consistent with that obtained by the energy dispersive X-ray analysis.

关 键 词：光电子材料 铝镓铟磷 反射椭偏光谱技术 带隙 吸收系数 介电函数 半导体化合物 光子能量 三级微商谱 

分 类 号：TN304.26[电子电信—物理电子学] TN204