偏压磁控溅射法在柔性衬底上制备ZnO:Al透明导电膜  

ZnO:Al FILMS DEPOSITED ON WATER-COOLED FLEXIBLE SUBSTRATES BY BIAS RF MAGNETRON SPUTTERING

作　　者：杨田林[1] 高绪团[1] 韩盛浩[2] 

机构地区：[1]山东理工大学物理系,山东省淄博市255049 [2]山东大学物理与微电子学院,山东省济南市250100

出　　处：《曲阜师范大学学报（自然科学版）》2002年第4期59-63,共5页Journal of Qufu Normal University(Natural Science)

基　　金：国家自然基金资助课题 (60 1760 2 1)

摘　　要：用射频偏压磁控溅射法 ,在水冷透明聚脂胶片上制备出了附着力强的ZnO :Al (AluminiumdopedZincOxide ,AZO)透明导电膜 ,膜的最小电阻率为 1.11× 10 -3 Ωcm ,薄膜的透过率高于 85 % .薄膜为多晶纤锌矿结构 ,垂直于衬底的C轴具有 [0 0 2 ]方向的择优取向 .重点探讨了薄膜的结构、光电性质与衬底所加负偏压的关系 .Good transparent conducting Aluminium doped Zinc Oxide films with good adherence were deposited on water_cooled polypropylene adipate substrates using bias r.f.magnetron sputtering.The films with resistivity as low as 1.11×10 -3 Ωcm and transmittance over 80% have been obtained by adjusting the bias voltage. The films are polycrystalline with a hexagonal wurtzite structure and a [002] preferred orientation. It was observed that the structure ,electrical and optical properties of films depend on the bias voltage applied to substrate table .

关 键 词：偏压磁控溅射法 柔性衬底 制备 ZnO:A1透明导电膜 光电性质 AZO薄膜 负偏压 

分 类 号：TN304.055[电子电信—物理电子学] TN305.92