HgCdTe MIS器件制备及其C-V特性研究  

The Manufacture of HgCdTe MIS Device and Its C-V Character

作　　者：张朝阳[1] 蔡毅[2] 张鹏翔[1] 

机构地区：[1]昆明理工大学材料系,昆明650051 [2]昆明物理研究所,昆明650223

出　　处：《红外技术》2002年第5期42-45,共4页Infrared Technology

摘　　要：通过在P HgCdTe上生长阳极硫化膜和ZnS介质钝化层 ,制备出了性能较好的MIS器件 ,并通过对MIS器件C V特性的分析 ,获得了ZnS/自身钝化膜 /P HgCdTe的界面特性。所测的界面电荷密度在 10 10 ～ 10 11cm- 2 之间 ,平带电压在In this study ,We report the growth of the sulfide film and the ZnS film on the top of P HgCdTe and achieved a better HgCdTe MIS device. The C V characterization of the MIS device also was investigated. From the result of the C V character analysis, We arrived the character of the interface of ZnS/sulfide/P HgCdTe, The interface charge concentration was between 10 10 and 10 11 /cm 2, and VFB was below 2 V.

关 键 词：HGCDTE MIS器件 C-V特性 红外焦平面探测器 

分 类 号：TN215[电子电信—物理电子学]