激光法制备高纯纳米SiC粉体及其产率  

Synthesis of high pure nanometer SiC powders by laser method and its production rate

作　　者：战可涛[1] 线全刚[2] 郑丰[2] 梁勇[2] 段雪[1] 

机构地区：[1]北京化工大学理学院 [2]中国科学院金属研究所激光加工研究室,沈阳110015

出　　处：《北京化工大学学报（自然科学版）》2002年第5期75-78,共4页Journal of Beijing University of Chemical Technology(Natural Science Edition)

摘　　要：以硅烷SiH4和乙烯C2 H4为反应原料 ,采用激光诱导化学气相沉积法 (LICVD)制备了高纯、低团聚、近球形的理想纳米SiC粉体。用化学分析、X射线衍射 (XRD)、透射电子显微镜 (TEM )及比表面积 (BET)等分析测试手段对粉体进行了表征 ,结果表明粉体中SiC含量高于 98% ,平均粒径为 2 0nm ,晶体结构为 β SiC ,粉体产率大于2 0 0 g/h ,粉体中氧含量低于 1% ,且主要是表面的吸附氧 ;从能量和反应气流量两个方面对粉体产率进行了理论分析 ,在此基础上推导出了粉体产率公式 ,与实际粉体产率基本一致。In this paper, spherical and ideal nanometer SiC powders with high purity and low agglomeration were synthesized by Laser Induced Chemical Vapor Deposition (LICVD) method with SiH 4 and C 2H 4 as starting materials. The powders produced were characterized by chemical analysis, XRD, TEM and BET techniques. The results show that the powders of β SiC crystallization has a purity of above 98% of SiC in weight with average diameter of 20?nm and less than 1% oxygen content in weight that is mainly absorbed on the surface of the powders. In addition, two formulas for calculation of the theoretical production rate of nanometer SiC powders synthesized by LICVD were conducted from the energy exchange between laser beam and reactants of SiH 4 and C 2H 4 and the flow rate of SiH 4, respectively. The two formulas are basically coincident with the actual SiC production rate of more than 200?g/h, and the one obtained from energy exchange points out the direction of enlarging production rate of SiC powders and adjusting process parameters, so it has a theoretical and practical meaning to the industrial production.

关 键 词：激光法 制备 SIC 产率 碳化硅 纳米粉体 陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业] TB383[化学工程—硅酸盐工业]