GaAs/GaAlAs反应离子刻蚀腔面激光器  

GaAs/GaAlAs RIE-Facet Laser

作　　者：庄婉如[1] 杨培生 陈纪瑛 李建中 

机构地区：[1]集成光电子学国家联合实验室中国科学院半导体实验区,北京100083

出　　处：《Journal of Semiconductors》1991年第8期477-481,T001,共6页半导体学报（英文版）

摘　　要：采用反应离子刻蚀GaAs/GaAlAs双异质结构激光器的一个腔面,已经获得室温下连续激射的效果,其阈电流比解理腔面高18％左右,量子效率低14％左右.One facet of GaAs/GaAlAs DH laser cavity was formed by using reactive ion etching(RIE) technique.CW lasing was observed in the lasers fabricated by this method. Comparedwith the cleaved cavity lasers, the average threshold current of RIE facet lasers has inceased byabout 18%, and the average external differentialquantum efficiency decreased by about 14%.

关 键 词：GAAS/GAALAS 离子刻蚀 腔面 激光器 

分 类 号：TN248[电子电信—物理电子学]