玷污硅片的无损检测及洁净工艺  

Nondestructive Evaluation of Metal Contamination in Silicon Wafers

作　　者：石国华[1] 竺树声[1] 卢兆伦 曾庆诚 

机构地区：[1]杭州大学电子工程系 [2]江西大学应用物理所

出　　处：《杭州大学学报（自然科学版）》1991年第3期287-291,T001,共6页Journal of Hangzhou University Natural Science Edition

基　　金：省自然科学基金

摘　　要：本文讨论了XCD-H红外电视显微镜对硅片的无损检测,发现硅片在切割、研磨工艺中普遍引入了金属杂质玷污,它是降低器件成品率的主要因素之一.由实验和应用证实了简单、可行的化学腐蚀洁净硅片法去除玷污是十分有效的.In this paper, silicon wafers are detected nondestructively. It is found that the metal contamination produced in grmding process affects electrical properties of the device, but the method for eliminating metal contamination is presented by etching the wafers chemically. Applications of this process to the semiconductor device manufacture are demonstrated, including the increase in product efficiency and improvement of the ohmic contact.

关 键 词：硅片 玷污 无损检测 洁净 

分 类 号：TN304.07[电子电信—物理电子学]