掺磷纳米硅薄膜的微结构  

Structure Characteristics of Phosphorus-Doped Hydrogenated Nano-Crystalline Silicon Films

作　　者：于晓梅[1] 王金良[1] 江兴流 王天民 

机构地区：[1]北京航空航天大学理学院

出　　处：《北京航空航天大学学报》2002年第5期547-549,共3页Journal of Beijing University of Aeronautics and Astronautics

摘　　要：采用喇曼 (Raman)散射谱、高分辨率电子显微镜 (HRTEM)和原子力显微镜 (AFM)对掺磷纳米硅薄膜的微结构进行了分析 ,并对纳米硅薄膜的传导机制进行了探讨 .结果表明 :掺磷纳米硅薄膜由尺寸为 2～ 4nm的晶粒和 2～ 3个原子层厚的非晶界面构成 ,计算得到薄膜的晶态比为 40 %～ 5 5 % .与本征纳米硅薄膜相比 ,掺磷纳米硅薄膜晶粒尺寸和晶态比没有明显变化 ,电导率却提高了 2个数量级 .随着掺磷浓度增加 ,纳米硅薄膜的晶粒尺寸、晶态比及电导率逐渐增大 .AFM观察表明掺磷纳米硅薄膜由尺寸介于 1 5～ 2 0nm的团簇构成 。By Raman spectroscopy, high resolution electron microscope and atomic force microscope, the structure of phosphorus doped hydrogenated nano crystalline silicon films (nc Si (P)∶H) was analyzed The films possess orderly arranged cluster feature in the size of 15～20?nm. The films are composed of nano crystalline grain and amorphous silicon, the crystalline volume fraction of the films is 40%～55%, the average grain size is between 2 and 4?nm. The grain size, the crystalline volume fraction and the conductivity of the nc Si (P)∶H increase as the doping concentration is increased. Compared with undoped hydrogenated nano crystalline silicon films, the conductivity of nc Si(P)∶H is increased almost 2 orders. Possible connection between the ordered cluster characteristics and the higher conductivity was finally appointed.

关 键 词：硅薄膜 晶粒 团簇 纳米材料 晶态 

分 类 号：TN304[电子电信—物理电子学]