大功率GRIN-SCH-SQW激光器阵列  

High Power Array Semiconductor Laser Grown by MBE

作　　者：李忠辉[1] 王玲[1] 李梅 高欣 张兴德 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室,130022

出　　处：《固体电子学研究与进展》2002年第3期255-256,264,共3页Research & Progress of SSE

摘　　要：分析了梯度折射率分别限制单量子阱 (GRIN-SCH-SQW)结构的特点以及对大功率半导体激光器特性的影响。利用分子束外延系统生长 Ga Al As/Ga As GRIN-SCH-SQW结构 ,经光荧光谱、X-射线双晶衍射、和载流子浓度测试 ,结果表明 ,该结构各参数均满足设计要求。应用此结构制成激光器阵列 ,室温准连续输出功率达5 8W(t=2 0 0 μs,f=5 0 Hz) ,峰值波长为 80 8nm。The GaAlAs/GaAs material with gradient refraction index separate confinement single quantun well structure has been grown by MBE. The experimental results show that wafer sample's quality has met the design requirement of GRIN SCH SQW array laser. The Q CW output power of array laser diodes comes up to 58 W ( t =200 μs, f =50 Hz) at the peak wavelength of 808 nm.

关 键 词：GRIN-SCH-SQW 分子束外延 阵列半导体激光器 分别限制 量子阱 

分 类 号：TN248.4[电子电信—物理电子学]