用于手机砷化镓MMIC射频开关的研制  

The Research on GaAs MMIC RF Switch for Handset

作　　者：蒋幼泉[1] 陈继义[1] 李拂晓[1] 高建峰[1] 徐中仓[1] 邵凯[1] 陈效建[1] 杨乃彬[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》2002年第3期326-328,共3页Research & Progress of SSE

摘　　要：报道一种用于手机的高功率、低插损砷化镓 MMIC射频开关。该产品在 870～ 970 MHz下 ,线性功率容量 >3 3 d Bm,插入损耗 (IL) <0 .6d B,隔离度 (Iso)≥ 1 7d B,反向三阶交调 (PT0 1 )≥ 70 d Bm,控制电压 :(0 ,-4) V。This paper reports a newly developed GaAs MMIC RF switch which features high power and low insertion loss. In the frequency range from 870 MHz to 970 MHZ, the power handling is more than 33 dBm, insertion loss( I L) is less than 0.6 dB, isolation( I so ) is equal to or more than 17 dB, reverse third order intercept point ( P T01 ) is equal to or more than 70 dBm and control voltage is (0, 4) V.

关 键 词：手机 砷化镓单片集成电路 双刀双掷开关 多栅场效应晶体管 

分 类 号：TN929.53[电子电信—通信与信息系统] TN43[电子电信—信息与通信工程]