氧气等离子处理对MIM结构ZrAlO薄膜电容性能的影响  

Influence of oxygen plasma treatments on electrical properties of metalinsulator-metal(MIM) structure capacitors based on ZrAlO thin films

作　　者：徐文彬[1] 任高潮[2] XU Wenbin;REN Gaochao(College of Information Engineering, Jimei University, Xiamen 361021, Fujian Province, China;Department of Information Science & Electronics Engineering, Zhejiang University, Hangzhou 310027, China)

机构地区：[1]集美大学信息工程学院,福建厦门361021 [2]浙江大学信息与电子工程系,浙江杭州310027

出　　处：《电子元件与材料》2017年第4期60-63,共4页Electronic Components And Materials

基　　金：福建省自然科学基金资助项目(No.2010J05136);福建省教育厅基金资助项目(No.JA11158)

摘　　要：探讨了氧气等离子处理法对基于Zr Al O薄膜的MIM结构电容电学性能的低温工艺优化。Zr Al O薄膜用射频磁控溅射法制得,之后在不改变真空条件的情况下进行Zr Al O薄膜的氧气等离子处理。氧空位是影响薄膜电容性能的主要因素,通过改变氧气流量和等离子功率等处理条件可以影响氧空位的分布状态。通过分析受氧空位影响的电容电学性能,最终确定的等离子处理工艺可以使薄膜漏电流降低三个数量级以上,同时非线性电压系数减小约60%。Oxygen plasma treatments were used for the low temperature improvement of electrical properties of metal-insulator-metal(MIM)structure capacitors based on ZrAlO thin films.The ZrAlO films for these capacitors were deposited by magnetron sputtering,and then treated by oxygen plasma without changing the vacuum conditions.Oxygen vacancies are considered as the main factors affecting electrical properties.Different plasma treating conditions including oxygen flow rate and plasma power result in variation of oxygen vacancies.The optimized plasma conditions are determined based on the analyses of oxygen vacancies related electrical properties.The leakage current is finally reduced by more than three orders of magnitude,and nonlinear voltage coefficient finally decreases by more than60%.

关 键 词：MIM电容 氧空位 ZrAlO 等离子 溅射 漏电流 

分 类 号：TN604[电子电信—电路与系统]