金属钨化学机械研磨清洗缺陷研究及解决方法  

Model of Defect Forming During Post Cleaning of W CMP and Improving Solution

作　　者：王雷 WANG Lei(Shanghai Huahong Grace Semiconductor Manufacturing Co. Ltd., Shanghai 201203, China)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《集成电路应用》2017年第8期59-62,共4页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(2015.150223)

摘　　要：通过研究金属钨化学机械研磨(W CMP)后清洗的一种水痕状的缺陷(Water mark like defect),经过一系列的实验,我们发现这种缺陷产生的原因是具有钨插塞(W Plug)结构的晶片在清洗中WO_3被溶解,并在随后的烘干环节中W析出并形成缺陷。在典型的W CMP之后增加一次DHF的清洗,能清除99.6%的该类型的缺陷,可应用到实际生产中,减少产品缺陷,提高产品良率。In this paper,water mark like defect was investigated during post clean step after W CMP.Through a series of experiments,we found this water mark defect was caused by condensed WO3residue which was dissolved into De-Ionized(DI)water at acid environment.By an additional dilute HF(DHF)wet clean step after typical W CMP process,we found that most of this defect can be removed with high efficiency to about99.6%.

关 键 词：集成电路制造 水痕 化学机械研磨 缺陷 

分 类 号：TN405[电子电信—微电子学与固体电子学]