一种应用于EEPROM读出放大器的设计  

Design of EEPROM's sense amplifier

作　　者：肖培磊[1] 胡小琴[1] 刘建成[2] XIAO Peilei;HU Xiaoqin;LIU Jiancheng(China Electronics Technology Group Corporation No.58th, Wuxi 214035, Jiangsu Province, China;China Institute of Atomic Energy, Beijing 102413, China)

机构地区：[1]中国电子科技集团第58研究所,江苏无锡214035 [2]中国原子能科学研究院(401所),北京102413

出　　处：《电子元件与材料》2017年第9期30-32,共3页Electronic Components And Materials

摘　　要：读出放大器是电可擦除非易失性存储器(EEPROM)中的关键模块,其读取速度决定了EEPROM的操作频率。基于国内先进的0.18μm工艺,对EEPROM放大器的基准电流源和比较器进行了分别设计,测试结果显示读出放大器的响应时间小于70 ns,可满足10 MHz的EEPROM存取速度的要求。The sense amplifier is the key module of EEPROM(Electrically Erasable Programmable Read-Only Memory)and it's response speed directly determines the EEPROM's operating frequency.Based on domestic advanced0.18μm EEPROM process,the amplifier's refer current source and comparator were respectively designed in this paper.The testing results show that the response time of the sense amplifier is less than70ns,and completely satisfies10MHz-EEPROM frequency requirement.

关 键 词：读出放大器 存储器 EEPROM 响应速度 操作频率 比较器 

分 类 号：TN304[电子电信—物理电子学]