衬底温度对直流反应磁控溅射TiN电极薄膜显微结构及导电性能的影响  

Effect of substrates temperature on microstructure and conductivity of TiN electrode thin film prepared by DC reactive magnetron sputtering

作　　者：周方杨 徐进[2] 杨喜锐 梁海龙 赵鹏 周大雨[1] ZHOU Fangyang;XU Jin;YANG Xirui;LIANG Hailong;ZHAO Peng;ZHOU Dayu(Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education),School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024,China;Department of electronic engineering, Dalian Neusoft University of Information, Dalian 116023,China)

机构地区：[1]大连理工大学材料科学与工程学院,三束材料改性教育部重点实验室,辽宁大连116024 [2]大连东软信息学院电子工程系,辽宁大连116023

出　　处：《功能材料》2017年第8期203-207,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51272034,51672032);中央高校基本科研业务费专项资金资助项目(DUT15LAB23)

摘　　要：二氧化铪基新型铁电薄膜器件等研究提出了在低衬底温度下制备高导电性和低表面粗糙度纳米超薄TiN电极薄膜的迫切需求。利用直流反应磁控溅射方法在单晶硅基片上制备TiN薄膜,衬底温度范围从室温~350℃,以XPS、XRD、AFM以及XRR等为主要手段对薄膜样品的成分、物相、表面粗糙度以及厚度和密度等进行了表征分析。结果表明在350℃的较低衬底温度下,通过减少溅射沉积时间可获得厚度<30nm的高导电性TiN电极薄膜。In the study of hafnium oxide based new-type ferroelectric thin films devices,it is required to deposit TiN ultra-thin electrode films with high conductivity and low surface roughness at low temperature.In this work,TiN thin film were prepared by DC reactive magnetron sputtering on silicon substrates with the deposi-tion temperature changed from room temperature to350°C.The composition,crystalline structure,surface roughness,thickness and density of the films were characterized by XPS-XRD,AFM,and XRR methods.It was found that,by reducing the deposition time,TiN electrode thin films with the thickness less than30nm and high conductivity can be successfully fabricate at the relatively low deposition temperature of350°C.

关 键 词：TIN 电极薄膜 衬底温度 电阻率 

分 类 号：TB43[一般工业技术]