Ge基Ⅲ-Ⅴ族半导体材料外延研究  

Study on the Epitaxy of Ge-Based Ⅲ-Ⅴ Semiconductor Materials

作　　者：何巍[1] HE Wei(The Chinese People′s Armed Police Force Academy, Langfang 065000, China)

机构地区：[1]中国人民武装警察部队学院,河北廊坊065000

出　　处：《廊坊师范学院学报（自然科学版）》2018年第1期28-32,共5页Journal of Langfang Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61176128)

摘　　要：Ge基Ⅲ-Ⅴ族半导体材料(GaAs/Ge,GaInP/Ge)在外延过程中存在很多问题,主要是反向畴和异质界面间原子的互扩散。在As或者P气氛中对Ge衬底表面进行高温预处理,可以有效避免反向畴形成。采用较低的生长温度和生长速率,可以有效抑制异质界面间原子的互扩散。There are many problems in the process of epitaxial Ge-based III-V semiconductor materials(GaAs/Ge,GaInP/Ge),which are mainly antiphase domains and interdiffusion between the heterogeneous interfaces.It is proposed that the high temperature pretreatment of the Ge substrate in As or P atmosphere can effectively avoid the formation of antiphase domains.The interdiffusion of atoms between heterogeneous interfaces can be effectively suppressed by using lower growth temperature and growth rate.

关 键 词：Ge GAAS GAINP 异质外延 

分 类 号：TN304.2[电子电信—物理电子学]