耐高压单色QLED器件制备  

Manufacture of high voltage monochrome QLED device

作　　者：张李[1] 马勇[1] ZHANG Li ;MA Yong(College of Physics and Electronic Engineering,Chongqing Normal University,Chongqing 401331,China)

机构地区：[1]重庆师范大学物理与电子工程学院,中国重庆401331

出　　处：《科技视界》2018年第4期124-126,共3页Science & Technology Vision

摘　　要：本文通过磁控溅射和有机蒸镀的方法分别制备了量子点LED(QLED)的ZnO电子传输层和NPB空穴传输层,构建了基于Cd Se/Cd S/ZnS量子点作为发光层的红光QLED。通过优化电子传输层和空穴传输层制备工艺得到了稳定的耐高压单色器件,测试结果表明该器件在10-15V范围均可持续稳定地发出红光。In this paper,ZnO electron transport layer and NPB hole transport layer were prepared by magnetron sputtering and organic vapor deposition,respectively.Red QLED based on CdS/CdS/ZnS quantum dots emitting layer was manufactured.A stable high voltage monochrome device was obtained by optimizing the electron transport layer and hole transport layer preparing technology.The test results showed that the device can emit monochrome red light at the voltage range from 10 to15V steadily.

关 键 词：量子点 发光二极管 磁控溅射 有机蒸镀 

分 类 号：O472[理学—半导体物理]