100mm直径低位错密度InSb单晶生长研究  

Study of Growth of 100mm Diameter Low Dislocation Density InSb Single Crystal

作　　者：赵超[1] 彭志强 柏伟[1] 程波[1] 陈元瑞[1] 贺利军 ZHAO Chao;PENG Zhi-qiang;BAI Wei;CHENG Bo;CHEN Yuan-rui;He Li-jun(North China Research Institute of Electro-optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2018年第3期9-12,17,共5页Infrared

摘　　要：InSb是一种重要的中波红外探测器材料。为了满足更大规模、更高质量红外焦平面探测器的发展要求,对100mm直径低位错密度InSb单晶的生长进行了研究。通过改良生长方法、优化籽晶、改进缩颈工艺、优化热场,最终获得位错密度小于等于100cm-2、直径大于等于100mm的大尺寸低位错密度InSb晶体。晶体沿晶棒从头到尾部的位错密度分布均匀,可用率高,能够满足大规模高质量红外焦平面探测器的使用需求。InSb is an important material for medium wave infrared detectors.To meet the development requirements of larger format high quality infrared focal plane array detectors,the growth of InSb single crystals with diameter of 100 mm and low dislocation density is studied.By improving and optimizing the growth method,seed,necking process and thermal field,a large size low dislocation density InSb crystal with its dislocation density equal to or less than 100 cm-2 and diameter equal to or greater than 100 mm is obtained eventually.The dislocation density of the crystal is distributed uniformly from the top to the end along the crystal rod.It can satisfy the use requirements of large format high quality infrared focal plane array detectors.

关 键 词：INSB 100 MM CZOCHRALSKI 缩颈 籽晶 

分 类 号：TN213[电子电信—物理电子学]