具有高阈值电压和超低栅漏电的400V常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管（英文）  

400V Normally-off Recessed MOS-Gate AlGaN/GaN HEMT with High Threshold Voltage and Ultra-Low Gate-Leakage Current

作　　者：赵勇兵[1,2] 程哲 张韵[1] 伊晓燕[1] 王国宏[1] 张雅希[3] Zhao Yongbing;Cheng Zhe;Zhang Yun;Yi Xiaoyan;Wang Guohong(Institute of Semiconductors Chinese Academy of Sciences,Beijing 100083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院大学,北京100049 [3]不详

出　　处：《电工技术学报》2018年第7期1472-1477,共6页Transactions of China Electrotechnical Society

基　　金：This work is supported by the National High Technology Research and Development Program of China(No.2014 AA 032606)and the National Natural Sciences Foundation of China(No.61376090,61306008).

摘　　要：介绍了一种采用ICP干法刻蚀技术制备的槽栅常关型AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。采用原子层淀积(ALD)实现40 nm的栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.3 V。在栅压时,槽栅常关型AlGaN/GaN MOS-HEMT饱和电流为0.71 A,特征导通电阻为5.73 m?·cm^2。在栅压时,器件的击穿电压为400 V,关断漏电流为320μA。器件的开启与关断电流比超过了109。在栅压为-20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电流为1.8 n A。高的开启与关断电流比和低的栅漏电流反映了界面具有很好的质量。We report normally-off operation of an AlGaN/GaN recessed MOS-gate high electron mobility transistor(MOS-gate HEMT)on Si(111)substrate fabricated with the inductively coupled plasma(ICP)recessed technique.By employing a 40nm thick Al2O3 gate dielectric deposited by atomic layer deposition(ALD),the AlGaN/GaN HEMT with a gate length of 2μm and a gate width of 10.35 mm exhibits a high threshold voltage of+4.3 V,a specific on-resistance of 5.73 mΩ·cm2 and a saturation drain current of 0.71 A.When the gate bias(Vgs)is 0V,the breakdown voltage(BV)of the AlGaN/GaN HEMT is 400 V and the drain to source leakage current is below 320μA with a gate-drain distance of 10μm.The on/off drain current ratio(ION/IOFF)is over 109.Under a negative gate bias(Vgs)of-20V,the gate to source leakage current is as low as 1.8 nA.Under a positive gate bias(Vgs)of+12 V,the gate to source leakage current is only 1.6μA.The high ION/IOFF ratio and low gate to source leakage both indicate high quality of the Al2O3/GaN interface.

关 键 词：ALGAN/GAN 高阈值电压 大栅压摆幅 常关型 

分 类 号：TM23[一般工业技术—材料科学与工程] TN3[电气工程—电工理论与新技术]