薄膜体声波谐振器调频工艺研究  

Study on Frequency Trimming of Film Bulk Acoustic Wave Resonator

作　　者：彭兴文 徐阳[1] 杜波[1] 张永川[1] 司美菊[1] 刘娅[1] 何西良[1] 卢丹丹 PENG Xingwen;XU Yang;DU Bo;ZHANG Yongchuan;SI Meiju;LIU Ya;HE Xiliang;LU Dandan(26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2018年第2期162-164,共3页Piezoelectrics & Acoustooptics

摘　　要：薄膜体声波器件具有体积小及性能高等优势,相关产品已被广泛应用于移动通信市场。薄膜体声波谐振器(FBAR)电极层和压电层等声学层的厚度、材料是影响谐振频率的主要因素。该文分析了FBAR调频的必要性、原理及扫描刻蚀的工作方式,研究了调频层薄膜在不同刻蚀功率时对器件频率的影响。通过对FBAR器件进行调频,频率均匀性提高了6.5倍,频率分散性得到显著改善。The thin film bulk acoustic wave device has many advantages of small size and high performance,the related products have been widely used in the mobile communications market.The thickness and material of acoustic layer such as electrode and piezoelectric layers of the film bulk acoustic resonator(FBAR)are main influence factors of resonant frequency.The necessity and principle of frequency trimming for FBAR and the way of scanning etching are analyzed in this paper.The influence of trimming layer film on the freguency of the device at different etching power is studied.The frequency uniformity is increased by 6.5 times,and the frequency deviation is improved significantly by frequency trimming of FBAR.

关 键 词：薄膜体声波谐振器 调频 频率分散性 离子束 

分 类 号：TN65[电子电信—电路与系统]