单片集成的压阻式加速度计设计及加工  

Design and Processing of Monolithic Integrated Piezoresistive Accelerometer

作　　者：何昱蓉 何常德[1] 张文栋[1] 宋金龙[1] HE Yurong;HE Changde;ZHANG Wendong;SONG Jinlong(Key Lab.of Instrumentation Science&Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《压电与声光》2018年第2期304-308,共5页Piezoelectrics & Acoustooptics

基　　金：国家杰出青年科学基金资助项目(61525107)

摘　　要：针对现实环境下加速度方向多维测试的需求,提出了一种"四边八梁"的MEMS低加速度g(g=9.8m/s2)值压阻式三轴加速度传感器。根据其工作原理进行结构设计,并通过ANSYS与Matlab软件分析、优化结构参数。设计工艺流程并进行离子注入、ICP干法刻蚀及深硅刻蚀等关键工艺加工,最终实现传感器器件加工及封装。利用精密离心机测得传感器3个轴向的的灵敏度分别为44.35μV/g、49.52μV/g、232.89μV/g,验证了设计方案可行性。Aiming at the requirement of multidimensional test of acceleration direction under realistic environment,a“four-sides and eight-beams”MEMS piezoelectric tri-axial accelerometer with low g value(g=9.8 m/s 2)is proposed in this paper.The structure of the accelerometer is designed according to the operating principle,and the structure parameters are analyzed and optimized by ANSYS and Matlab software.The process flow is designed and the fabrication and packaging of the sensor are realized through the key processes of ion implantation,ICP dry etching and deep silicon etching.The measured sensitivities of the sensor in the three axial directions are 44.35μV/g,49.25μV/g and 232.89μV/g respectively by using the precision centrifuge,and the feasibility of the design scheme is verified.

关 键 词：三轴加速度传感器 压阻效应 微机电系统(MEMS) 离子注入 深硅刻蚀 

分 类 号：TN384[电子电信—物理电子学]