一种单大马士革结构超厚铜集成电感  

A Ultra-thick Copper Based Inductor Using Single Damascene Process

作　　者：曾绍海[1] 陈张发 李铭[1] ZENG Shaohai;CHEN Zhangfa;LI Ming(Shanghai IC R&D Center,Shanghai 201210,China)

机构地区：[1]上海集成电路研发中心有限公司,上海201210

出　　处：《集成电路应用》2018年第4期51-54,共4页Application of IC

基　　金：国家重大专项课题(2011ZX02702_004)

摘　　要：成功开发超厚介质膜的淀积和刻蚀工艺、超厚金属铜的电镀和化学机械研磨等工艺,采用与CMOS完全兼容的铜互连单大马士革工艺制作了超厚金属铜集成电感。该超厚金属铜电感在1~3 GHz频率范围内的电感值均匀,在2.5 GHz频率下的Q值达到11。并且进一步研究了线圈圈数、金属线宽和金属间距对电感值和Q值的影响。The technology of deposition and etching of super thick dielectric film,electrochemical plating(ECP)of super thick copper and chemical-mechanical polishing(CMP)were successfully developed in this paper.Super-thick copper integrated inductors were fabricated using copper-interconnected Single Damascus processes that are fully CMOS compatible.The inductance of the super thick copper inductor is uniform in the range of 1~3 GHz,and the Q value at 2.5 GHz is 11.In addion,the influence of coil number,metal line width and metal distance on the value of inductance and Q is further studied.

关 键 词：集成电路制造 工艺开发 单大马士革 铜电感 品质因子Q 

分 类 号：TN405[电子电信—微电子学与固体电子学]