导电SrTiO_3上脉冲激光沉积非晶HfO_2薄膜的漏电机理分析  

Leakage mechanism analysis of amorphous HfO_2 thin film coated on conductive SrTiO_3 by pulse laser deposition

作　　者：周瑶 何鹏[1] 幸代鹏 曾慧中[1] 张万里[1] ZHOU Yao;HE Peng;XING Daipeng;ZENG Huizhong;ZHANG Wanli(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都611731

出　　处：《电子元件与材料》2018年第8期30-35,共6页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(U1435208)

摘　　要：利用脉冲激光沉积技术在Sr Ti O_3表面导电层上方制备非晶Hf O_2栅介质薄膜,通过磁控溅射技术在非晶Hf O_2栅介质薄膜上方制备直径为100μm的圆形Pt电极,研究了变温条件下Pt/Hf O_2/Sr Ti O_3的漏电流I-V特性,分析了非晶Hf O_2栅介质层的漏电机制,如空间电荷限制电流机制、Fowler-Nordheim导电机制、Pool-Frenkel发射机制、肖特基发射机制。研究结果表明在低压段(<0.18 V)为欧姆导电;在高压段(>0.5 V)为Pool-Frenkel发射机制。The amorphous HfO2 gate dielectric film was coated on SrTiO3 surface conductive layer by pulsed laser deposition technique.The circular Pt electrode was prepared on the amorphous HfO2 gate dielectric film by magnetron sputtering technology and the diameter of Pt electrode is 100μm.The I-V characteristics of Pt/HfO2/SrTiO3 were researched at different temperatures.The emphasis was on the mechanism of leakage current of amorphous HfO2 gate dielectric film,such as space charge limiting current mechanism,Fowler-Nordheim conducting mechanism,Pool-Frenkel emission mechanism,and Schottky emission mechanism.The results show that mechanism of leakage current of amorphous HfO2 gate dielectric film is Ohmic conduction at low bias(<0.18 V),and it is Pool-Frenkel emission mechanism at high bias(>0.5 V).

关 键 词：脉冲激光沉积 非晶薄膜 SrTiO3表面导电层 HFO2栅介质 I-V特性 漏电机制 

分 类 号：O487[理学—固体物理]