MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响  

Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)

作　　者：韩军[1] 赵佳豪 邢艳辉[1] 史峰峰 杨涛涛 赵杰 王凯[1] 李焘 邓旭光[2] 张宝顺[2] HAN Jun;ZHAO Jia-hao;XING Yan-hui;SHI Feng-feng;YANG Tao-tao;ZHAO Jie;WANG Kai;LI Tao;DENG Xu-guang;ZHANG Bao-shun(Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]北京工业大学微电子学院光电技术教育部重点实验室,北京100124 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《发光学报》2018年第9期1285-1290,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61204011;11204009;61574011);北京市自然科学基金(4142005);北京市教委科研基金(PXM2017_014204_500034)资助项目~~

摘　　要：采用金属有机化学气相沉积(MOCVD)技术在Si(111)衬底上外延Ga N薄膜,对高温Al N(HT-Al N)缓冲层在小范围内低生长压力(6.7~16.6 k Pa)条件下对Ga N薄膜特性的影响进行了研究。研究结果表明Ga N外延层的表面形貌、结构和光学性质对HT-Al N缓冲层的生长压力有很强的的依赖关系。增加HT-Al N缓冲层的生长压力,Ga N薄膜的光学和形貌特性均有明显改善,当HT-Al N缓冲层的生长压力为13.3 k Pa时,得到无裂纹的Ga N薄膜,其(002)和(102)面的X射线衍射峰值半高宽分别为735 arcsec和778 arcsec,由拉曼光谱计算得到的张应力为0.437 GPa,原子力显微镜(AFM)观测到表面粗糙度为1.57 nm。GaN films were grown on Si(111)substrates by metal-organic chemical vapor deposition(MOCVD).The influence of high temperature AlN(HT-AlN)buffer low various growth pressure(6.7-16.6 kPa)on GaN films was studied.It is found that,the surface morphology and structural and optical properties of the GaN epilayer strongly depend on HT-AlN buffer growth pressure.Increase the growth pressure of HT-AlN buffer,the optical and morphology properties of GaN film are both significantly improved,when the growth pressure of HT-AlN buffer layer was at 13.3 kPa,we obtained a crack-free GaN film,the XRD FWHM of(002)and(102)plane of GaN film are 735 and 778 arcsec,respectively.The tensile stress calculated from Raman spectra is 0.437 GPa,and RMS roughness of AFM 5μm×5μm scan is 1.57 nm.

关 键 词：高温AlN缓冲层 氮化镓 金属有机化学气相沉积 X射线衍射 拉曼光谱 

分 类 号：O484.4[理学—固体物理]