5 V pMOS器件的热载流子注入退化机理  

Investigations on Hot-Carrier Injection Degradation Mechanism of 5 V pMOS Device

作　　者：杨翰琪 刘小红 吕康 魏家行 孙伟锋[1] YANG Hanqi;LIU Xiaohong;Lv Kang;WEI Jiaxing;SUN Weifeng(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096 China;CSMC Technologies Corporation,Wuxi Jiangsu 214000,China)

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096 [2]华润上华半导体有限公司,江苏无锡214000

出　　处：《电子器件》2018年第5期1093-1096,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61604038);江苏省高校品牌专业建设工程项目

摘　　要：研究了低压pMOS器件热载流子注入HCI(Hot-Carrier Injection)退化机理,分析了不同的栅压应力下漏极饱和电流(Idsat)退化出现不同退化趋势的原因。结合实测数据并以实际样品为模型进行了器件仿真,研究表明,快界面态会影响pMOS器件迁移率,导致Idsat的降低;而电子注入会降低pMOS器件阈值电压(Vth),导致Idsat的上升。当栅压为-7.5 V时,界面态的产生是导致退化的主要因素,在栅压为-2.4 V的应力条件下,电子注入在热载流子退化中占主导作用。The hot-carrier injection(HCI)degradation mechanism of low voltage pMOS device is studied,and the reason for the different degradation tendency of the saturated drain current(I dsat)under different gate bias stresses is explained.Combining the actual experimental data,the electronic injection and interface states based on the model of actual device are simulated.The results show that,fast interface states will reduce the migration rate of pMOS devices,resulting in the reduction of I dsat,while the electronic injection will reduce the threshold voltage(V th)of pMOS device,resulting in the increase of I dsat.When gate voltage is-7.5 V,the generation of interface states is the main factor leading to degradation,while under the stress condition of gate voltage of-2.4 V,electron injection plays a dominant role in hot carrier degradation.

关 键 词：PMOS 热载流子注入 不同栅压应力 TCAD仿真 

分 类 号：TN386.1[电子电信—物理电子学]