KU波段GaN MMIC功率放大器的研究  

Research of the Ku-Band GaN MMIC Power Amplifier

作　　者：孙嘉庆 郑惟彬[1] 钱峰[1] SUN Jiaqing;ZHENG Weibin;QIAN Feng(Nanjing Electronic Devices Institute,Nanjing 210096,China)

机构地区：[1]南京电子器件研究所,南京210096

出　　处：《电子器件》2018年第5期1141-1144,共4页Chinese Journal of Electron Devices

摘　　要：测试验证了谐波的源端阻抗对于器件的性能以及输出特性有很大的影响,所以基波匹配中不能忽视谐波的影响。基于此研制了一款采用0.25μm工艺GaN功率MMIC 12 GHz^17 GHz放大器芯片,源端加入了谐波控制的部分。后期通过管壳测试以及后仿真分析功放的性能,提出一些改进芯片的方法。芯片采用二级放大的结构。末级匹配电路采用功率匹配,兼顾功率和效率;级间考虑二次谐波的匹配,进一步提高效率。输入和级间均采用有耗匹配,提高稳定性。芯片在12 GHz^17 GHz范围内漏压28 V,输出功率35 d Bm,功率增益14 d B^15 d B,最大功率附加效率大于40%。That the harmonic source impedance is critical to device performance and can significantly affect device output performance is proved by testing,and the influence of harmonics in the matching of fundamental waves cannot be ignored.A Ku-band 12 GHz^17 GHz power amplifier MMIC has been developed utilizing 0.25μm gallium nitride HEMT technology adding second harmonic tuned.In the later stage,some methods for improving the chip are put forward through the test of the shell and performance of the later simulation analysis.The MMIC has been designed using a two-stage structure.Power matching has been used in the output stage to improve the power and efficiency.And second harmonic tuned has been used in the middle stage in order to improve the efficiency.Loss matching has been used in both input and middle stage for stability.At 12 GHz^17 GHz,the MMIC shows an output power of 35 dBm,power gain 14 dB^15 dB and the maximum power added efficiency greater than 40%.

关 键 词：GAN MMIC KU波段 阻抗匹配 负载牵引 谐波 

分 类 号：TN722.75[电子电信—电路与系统]