基于CMOS-MEMS工艺的高深宽比体硅刻蚀方法的研究  

Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process

作　　者：张海华 吕玉菲 鲁中轩 Zhang Haihua;Lv Yufei;Lu Zhongxuan(Beijing Institute of Spacecraft System Engineering,Beijing 100094,China;Beijing Space era Laser Navigation Technology Co.,Ltd.,Beijing 100094,China)

机构地区：[1]北京空间飞行器总体设计部,北京100094 [2]北京航天时代激光导航技术有限公司,北京100094

出　　处：《电子技术应用》2018年第10期32-36,40,共6页Application of Electronic Technique

摘　　要：为了满足提高MEMS传感器阵列的集成度和精度以及降低成本等需求,对高深宽比的体硅深槽刻蚀方法进行研究。在一种小尺寸、高集成度的MEMS传感器阵列的制造中,需要加工一种深宽比为25μm/0.8μm的隔离深槽,并且为了便于MEMS传感器和CMOS集成电路的集成,需要采用COMS工艺兼容的MEMS工艺。为此,采用了RIE、Bosch工艺以及RIE和Bosch工艺结合的3种方法进行深槽刻蚀工艺的探索,并最终采用RIE和Bosch工艺结合的方法获得槽侧壁非常光滑的深槽形貌。Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it.To fabricate silicon isolation trenches with aspect ratio equaling to 25μm/0.8μm,we use and compare three kinds of MEMS process,Reactive Ion Etching(RIE),Bosch,and RIE combined with Bosch,which are all CMOS process compatible and easy to integrate with CMOS ICs.Finally it proves that RIE combined with Bosch process is better than the other two in producing deep trenches with smooth side walls.

关 键 词：CMOS-MEMS工艺 高深宽比 深槽刻蚀 RIE和Bosch工艺 

分 类 号：TN43[电子电信—微电子学与固体电子学]