生长温度对MOCVD外延Zn O纳米结构的影响  

Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

作　　者：徐德前 庄仕伟 马雪 徐佳新 张宝林[1] XU De-qian;ZHUANG Shi-wei;MA Xue;XU Jia-xin;ZHANG Bao-lin(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]集成光电子学国家重点联合实验室吉林大学电子科学与工程学院,吉林长春130012

出　　处：《发光学报》2018年第10期1425-1430,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61574069)资助项目~~

摘　　要：为了探究生长温度对外延Zn O纳米结构的影响,得到Zn O纳米结构可控生长的生长温度条件。利用金属有机化学气相沉积(MOCVD)方法,设计并获得了不同生长温度的Zn O外延样品,并对所有样品进行了表面形貌、光学特性、电学特性表征和结晶质量表征。实验结果表明:600℃生长的Zn O纳米柱横向尺寸最小,为65 nm左右,其光学特性也相对较好,晶体衍射峰的半峰宽最小,为0. 165°,晶粒尺寸最大,为47. 6 nm;电学性质相对最优的为640℃生长的Zn O样品,霍尔迁移率高达23. 5 cm^2/(V·s)。通过结果分析发现,生长温度能影响外延Zn O的生长模式,从而影响Zn O的形貌、光学、电学和晶体质量等特性。To investigate the effect of growth temperature on epitaxial ZnO nanostructures and optimize the growth temperature conditions for controlled growth of ZnO nanostructures,ZnO epitaxial samples with different growth temperatures were designed and obtained by metal organic chemical vapor deposition(MOCVD).All the samples were characterized by surface morphology,optical,electrical and crystal quality characterizations.The experimental results show that the ZnO nanorods grown at 600℃have the smallest transverse dimension of about 65 nm,which the optical properties are the best.Its FWHM of the diffraction peak is the smallest of 0.165°with the largest grain size of 47.6 nm.Among these samples,the sample grown at 640℃has the relatively optimal electrical property,with the Hall mobility of 23.5 cm 2/(V·s).Through the analysis of the results,it is found that the growth temperature can affect the growth mode of epitaxial ZnO and thus the morphology,optical,electrical and crystal properties of ZnO.

关 键 词：ZNO MOCVD 生长温度 纳米结构 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TH691.9[自动化与计算机技术—计算机科学与技术]