退火参数对p-Si与Ti/Pt/Au欧姆接触的影响  

Influence of Annealing Parameters on Ohmic Contact of p-Si and Ti/Pt/Au

作　　者：林立娜 梁庭[1,2] 赵丹 杨娇燕 李奇思 雷程[1,2] LIN Lina;LIANG Ting;ZHAO Dan;YANG Jiaoyan;Li Qisi;LEI Cheng(Key Laboratory of Instrumentation Science and Dynamic Measurement,North University of China,Ministry of Education,Taiyuan 030051,China;Science and Technology on Electronic Test and Measurement Laboratory,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术国防科技重点实验室,太原030051

出　　处：《传感技术学报》2018年第10期1499-1504,共6页Chinese Journal of Sensors and Actuators

基　　金：国家杰出青年科学基金项目(51425505)

摘　　要：针对SOI(Silicon on Insulator,绝缘体上的硅)高温压力传感器,在真空环境下使用退火的热处理方法,减小了p-Si与Ti/Pt/Au的接触电阻,得到了合适的电阻值和小的比接触电阻率。通过单一因素控制法研究了退火时间和退火温度两个关键因素对样品电阻值和接触表面形貌的影响。采用半导体分析仪、扫描电镜(SEM)和高低温探针台等测试设备以及传输线模型测试方法对样品的欧姆接触性能进行分析,得出了不同温度和时间与欧姆接触的关系。实验结果表明:样品在退火条件为570℃,80 min时电阻的I-V(伏安特性)曲线呈线性,阻值符合设计值,比接触电阻率小,在0～400℃测试环境下电阻值比较稳定。For the SOI(Silicon on Insulator)high temperature pressure sensor,the annealing process under vacuum environment is used to reduce the contact resistance between p-Si and Ti/Pt/Au,and the suitable resistance value and small specific contact resistance are obtained.The influence of annealing time and annealing temperature on resistance and contact surface morphology were investigated by single factor control method.The ohmic contact properties of the samples were analyzed by the test equipment of semiconductor analyzer,scanning electron microscopy(SEM)and high/low temperature probe station as well as the test method of transmission line model.The relationship of the annealing time and annealing temperature on the ohmic contact was obtained.The experimental results show that when the annealing conditions are at 570℃and 80 min,the I-V curves of the samples are linear,the value of the varistor is in accordance with the design value and small specific contact resistance is obtained.The resistance is relatively stable under the test environment resistance of 0~400℃.

关 键 词：退火 欧姆接触 伏安特性曲线 表面形貌 电极 比接触电阻率 

分 类 号：TN305.99[电子电信—物理电子学]