4H-SiC沟槽结势垒二极管研制  

Development of 4H-SiC trench junction barrier Schottky diodes

作　　者：汤益丹[1,2] 董升旭 杨成樾 郭心宇[1] 白云 TANG Yi-dan;DONG Sheng-xu;YANG Cheng-yue;GUO Xin-yu;BAI Yun(High-Frequency High-Voltage Devices and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所高频高压器件与集成研发中心,北京100029 [2]中国科学院大学,北京100049

出　　处：《电工电能新技术》2018年第10期22-26,38,共6页Advanced Technology of Electrical Engineering and Energy

基　　金：国家重点研发计划项目(2016YFB0100601)

摘　　要：优化设计了1200V 4H-SiC沟槽结势垒二极管(TJBS)主结处的沟槽结构,将主结范围内间隔刻槽的槽下、槽间进行P型注入形成结势垒,纵向增加了结势垒面积,从而在反向时可以有效利用主结承担更多电压,并有利于反向时耗尽区向终端区的扩展。通过Silvaco二维仿真软件对主结处的沟槽结构进行优化设计,其优化结构仿真击穿电压高达1843V。并实际制作了此优化结构TJBS,结果表明其反向击穿特性优于传统沟槽结构。In this paper,the trench structure at the main junction of 4H-SiC Trench Junction Barrier Schottky(TJBS)diodes is optimized to lower the electric field at the Schottky interface on reverse bias.The P-type injection is formed under the trench and the trench structure between the main junctions forms a junction barrier,and the junction barrier area is increased,so that it can be effectively utilized on reverse bias.The main junction takes on more voltage and facilitates the expansion of the depletion region to the termination region.The breakdown voltage of 1843V for optimized structure was reached by Silvaco.And then,the TJBS diode was fabricated.The optimized trench structure for main junction can obtain better reverse characteristic than others.

关 键 词：4H-SIC 沟槽结势垒二极管 主结 耐压特性 

分 类 号：TN304.24[电子电信—物理电子学]