碳化硅MOSFET换流回路杂散电感提取方法的优化  

Optimized Extraction Method of Stray Inductance in Commutation Path for Silicon Carbide MOSFET

作　　者：谢宗奎 柯俊吉 赵志斌 黄华震 崔翔 Xie Zongkui;Ke Junji;Zhao Zhibin;Huang Huazhen;Cui Xiang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing 102206 China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206

出　　处：《电工技术学报》2018年第21期4919-4927,共9页Transactions of China Electrotechnical Society

基　　金：国家重点研发计划资助项目(2016YFB0400503)

摘　　要：在基于碳化硅(SiC)MOSFET器件的高压高频变换器中,快速的开关瞬态电流变化率di/dt会作用于换流回路杂散电感上,导致SiC MOSFET器件承受较大的电气应力,增加系统电磁干扰。因此,换流回路杂散电感的准确提取对于分析器件的开关特性非常关键。所以,该文提出了基于开关振荡频率的换流回路杂散电感提取方法,该方法具有不受杂散电阻、测量延时和平台尺寸的限制等优点。最后将该方法与现有的不同杂散电感提取方法进行了对比,验证了其有效性。In high-voltage and high-frequency converters based on silicon carbide(SiC)MOSFET devices,the rapid changing rate of the switching transient current,di/dt,coupling with the stray inductance in commutation path,will cause the large electric stress and increase electromagnetic interference.The accurate extraction of the stray inductance of the commutating path is significant for analyzing the switching characteristics of the device.Thus,the stray inductance extraction method of commutation path based on the switching oscillation frequency is proposed.This method has some advantages of being independent from the influence of stray resistance,measurement delay,and platform size.Finally,the proposed method is compared to various existing methods for extracting stray inductances,and its accuracy is verified.

关 键 词：碳化硅 MOSFET 换流回路 杂散电感 开关振荡频率 

分 类 号：TM85[电气工程—高电压与绝缘技术]