二维MoS2以及Pentacene/MoS2异质结的光学和电学性质  

Optical and Electrical Properties of Two-dimensional MoS_2 and Pentacene/MoS_2 Heterojunction

作　　者：白志英 邓金祥[1] 潘志伟 张浩 孔乐[1] 王贵生 BAI Zhi-ying;DENG Jin-xiang;PAN Zhi-wei;ZHANG Hao;KONG Le;WANG Gui-sheng;DENG Jin-xiang(College of Applied Sciences,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学应用数理学院,北京100124

出　　处：《光子学报》2018年第12期73-78,共6页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.60876006,60376007);北京市教育委员会科技计划重点项目(No.KZ201410005008)资助。

摘　　要：以硫粉末和MoO_3粉末作为原料,通过化学气相沉积法制备出MoS_2薄膜,用光学显微镜、原子力显微镜、喇曼光谱以及X射线衍射谱对所制备的MoS_2薄膜进行表征。结果表明:制备得到的二维MoS_2,其晶体形貌为三角形,尺寸约为60μm,薄膜厚度约为0.7nm;二维MoS_2可以作为理想的表面增强喇曼散射衬底,促进与有机小分子的电子转移,因此两者的喇曼光谱强度均增强。在MoS_2薄膜上沉积有机小分子pentacene制备出具有良好整流特性的有机-无机pentacene/MoS_2异质结,通过分析ln(I/V2)-1/V曲线,发现该异质结存在Fowler-Nordheim隧穿现象,logI-logV曲线显示当电压在0～1V时,电荷传导为欧姆导电,当电压高于1V时,电荷传导由空间电荷限制电流机制主导.研究结果可为单层MoS_2与有机小分子pentacene结合应用于光电领域提供基础.Using sulfur powder and MoO 3 powder as raw materials,the MoS 2 film was synthesized by chemical vapor deposition method,and was characterized by optical microscopy,atomic force microscopy,raman spectroscopy and X-ray diffraction.Results show that the crystal morphology of the MoS 2 is triangle with size of 60μm and thickness of 0.7 nm;and as one kind of the ideal substrates for surface-enhanced Raman scattering,two-dimensional MoS 2 can promote the charge transfer between the organic molecule and MoS 2,so the Raman intensity of them are enhanced.The pentacene was adsorbed onto the MoS 2 film by physical vapor deposition method,and the organic-inorganic pentacene/MoS 2 heterojunction with ideal rectifier characteristic was prepared.Analysing the ln(I/V 2)-1/V curve,it is seen that the Fowler-Nordheim tunnelling phenomenon occured through the heterojunction;log I-log V curve shows that charges transport controled by ohmic conduction at 0~1 V voltages zone,and space-charge-limited currents predominate at over 1 V voltages zone.The research of MoS 2 single-layer film and pentacene film will be contributed to the optoelectronic field.

关 键 词：二维材料 异质结 化学气相沉积法 喇曼增强 光电性质 

分 类 号：TB383[一般工业技术—材料科学与工程] O475[理学—半导体物理]