钽酸锂单晶片几何参数控制技术研究  

Investigation on Geometry Parameters of Lithium Tantalate Crystalline Wafer

作　　者：杨洪星[1] 王雄龙[1] 杨静[1] 范红娜[1] 李明佳 YANG Hongxing;WANG Xionglong;YANG Jing;FAN Hongna;LI Mingjia(The 46th Research Institute of CETC,Tianjin 300220, China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《压电与声光》2018年第6期847-850,共4页Piezoelectrics & Acoustooptics

摘　　要：钽酸锂单晶材料具有良好的压电性能,是制作声表面波器件的理想衬底材料之一。该文从化学腐蚀、磨料粒径和粘蜡工艺3方面进行研究,钽酸锂单晶片的几何参数得到有效控制,最终得到了几何参数优越的钽酸锂单晶抛光片。其中总厚度变化(TTV)≤5μm,局部平整度(LTV)≤1.5μm,局部平整度合格比例(PLTV)≥95%,翘曲度(Warp)≥20μm,弯曲度(Bow)≤10μm,达到了商用钽酸锂单晶片的技术水平。The lithium tantalate crystal material is one of the perfect substrate materials for the manufacturing of surface acoustic wave(SAW)devices due to its good piezoelectric performance.In this paper,the geometry parameters of lithium tantalate wafer are controlled through researching the chemical etching process,lapping slurry particle size and mounting process.Finally,the lithium tantalate monocrystalline polished wafers with excellent geometry parameters are obtained.The TTVvalue of lithium tantalate wafer is less than equal to 5μm,LTVvalue is less than or equal to 1.5μm,the PLTVvalue of is great than or equal to 95%,Warpvalue is greater than or equal to20μm,Bowvalue is less than or equal to 10μm.The quality level of lithium tantalate wafer has met the commercial requirements.

关 键 词：钽酸锂 几何参数 化学腐蚀 研磨 抛光 

分 类 号：TN384[电子电信—物理电子学]