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作 者:何军锋[1] HE Jun-feng(School of Physics and Telecommunicatiom,Shaanxi University of Technology,Hanzhong 723001,China)
机构地区:[1]陕西理工大学物理与电信工程学院,陕西汉中723001
出 处:《应用化工》2018年第11期2326-2328,2335,共4页Applied Chemical Industry
基 金:国家自然科学基金(61301237)
摘 要:制备了Fe掺杂Zn S稀磁薄膜(Fe掺杂量x=0. 000,0. 005,0. 010,0. 015),利用XRD、PL光谱以及磁性测试系统测量分析了Fe掺杂对Zn S薄膜的晶体结构、发光特性及磁特性的影响。结果表明,薄膜的饱和磁化强度随Fe掺杂量x增加而逐渐增大,Fe掺杂量x> 0. 005时,薄膜的结晶品质逐渐变差,缺陷数量随之增多,导致磁信号通过缺陷传导而逐渐增强,致使其饱和磁化强度增大。Fe doped ZnS diluted magnetic films(Fe doping amount x=0.000,0.005,0.010,0.015)were prepared and the effects of Fe doping on the crystal structure,luminescence property and magnetic property of ZnS films were measured and analyzed by XRD,PL spectra and magnetic testing system.The results show that the saturation magnetization of the films increases gradually with Fe doping amount x.XRD and PL spectra show that the crystal quality of the samples gradually deteriorates,the number of defects increases,and the magnetic signal gradually enhances through defect conduction,resulting in the saturation magnetization increasing,when Fe doping amount x is greater than 0.005.
关 键 词:稀磁半导体材料 ZNS薄膜 FE掺杂 缺陷 磁特性
分 类 号:TQ460[化学工程—制药化工] TB383.2[一般工业技术—材料科学与工程]
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