干法刻蚀InSb时Ar气含量的选取  

The selection of Ar content in the dry etching of InSb material

作　　者：李海燕[1] 谭振[1] 陈慧卿[1] 亢喆[1] LI Hai-yan;TAN Zhen;CHEN Hui-qing;KANG Zhe(North China Research Institute of Electro-Optics,Beijing100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2018年第12期1503-1508,共6页Laser & Infrared

摘　　要：感应耦合等离子体(ICP)刻蚀技术是目前国际制备InSb台面结型焦平面阵列技术的主流技术之一。文章研究采用ICP刻蚀技术,以CH4/H2/Ar刻蚀气体体系对InSb材料进行干法刻蚀时刻蚀气体体系中Ar气体积组分对材料刻蚀形貌及器件性能的影响。实验方案设置为在控制其他实验变量相同的情况下设置不同Ar气体积分数的刻蚀气体体系对InSb材料进行台面蚀刻,通过扫描电子显微镜(SEM)、激光共聚焦显微镜考察台面刻蚀形貌,通过I-V测试得到的器件性能结果考察刻蚀损伤情况。从实验结果得到,Ar体积占据总气体体积的30%～35%时台面刻蚀形貌良好,表面损伤轻,器件性能良好,刻蚀工艺满足要求。The ion coupled plasma etching(ICP)technology is one of the main technology of the fabrication of InSb mesa-focal plan array worldwide.The paper focuses on the effect of Ar vacuum content in the CH4/H2/Ar gas system to the etching morphology and device performance,when etching InSb material using ICP etching technology.The InSb etching gas systems are set with different Ar content while other experiment parameters are the same.After the experi-ments,Scanning Electron Microscope,Laser Scanning Confocal Microscopy are used to test the mesa etching morpholo-gy,and I-V test is used to test the etching damage by investigating the device performance.Ar content of30%?35%in the gas system will result in good mesa etching morphology and less surface damage,which will result in good de-vice performance and meet the etching request.

关 键 词：锑化铟 感应耦合等离子体刻蚀 氩气 表面形貌 化学计量比 I-V测试 

分 类 号：TN215[电子电信—物理电子学]