Al掺杂HfO2高k栅介质沉积后退火工艺研究  

Study on Post Deposition Annealing Process of Al-Doped HfO_2 High-k Dielectric

作　　者：李佳帅 张静 杨红[2] 刘倩倩 闫江 LI Jiashuai;ZHANG Jing;YANG Hong;LIU Qianqian;YAN Jiang(School of Electronic Information Engineering,North China University of Technology,Beijing 100144,China;Institute of Microelectronics Chinese Academy of Sciences,University of Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]北方工业大学电子信息工程学院,北京100144 [2]中国科学院微电子研究所中国科学院大学,北京100029

出　　处：《电子器件》2018年第6期1362-1366,共5页Chinese Journal of Electron Devices

基　　金：Ge基MOS器件迁移率的远程库伦散射机制的研究项目(61674003)。

摘　　要：为满足集成电路发展需求,通过向Hf O2掺入Al元素形成Al掺杂的Hf O2新型高k材料,并在不同的环境和温度下进行退火,研究其电学特性的变化。通过对电学参数的分析,研究Al掺杂Hf O2材料体内正电荷缺陷、k值(晶相变化)、界面层厚度、栅漏电等的影响。最终,在N2环境中700℃退火条件下,Al掺杂Hf O2的电学特性达到最优,其EOT为0.88 nm、Vfb为0.46 V和Ig为2.19×10-4A/cm2。最优条件下的EOT(Equivalent Oxide Thickness)可以满足14/16(nm)器件的需要(EOT<1 nm),Ig比相同EOT的Hf O2材料小3个数量级。In order to meet the development needs of integrated circuits,Al-doped HfO2 new high-k materials were formed by doping Al into HfO2,and annealing was performed under different environments and temperatures to study the changes in electrical characteristics.Through the analysis of electrical parameters,the effects of Al-doped HfO2 material on positive charge defects,k value(change of crystal phase),interface layer thickness,gate leakage,etc.were studied.Finally,under the annealing condition of 700℃in N2 environment,the electrical properties of Al-doped HfO2 are optimized,and the EOT(Equivalent Oxide Thickness)is 0.88 nm,Vfb is 0.46 V and Ig is 2.19×10-4 A/cm^2.Meanwhile,its EOT can meet the request of 14/16(nm)devices(EOT<1 nm),and its Ig is 3 orders of magnitude smaller than the HfO2 under the same EOT.

关 键 词：微电子 Al掺杂的HfO2 退火工艺 结晶 C-V特性 高k 

分 类 号：TN305[电子电信—物理电子学]