阳离子型与非离子型表面活性剂的复配对阻挡层化学机械抛光的影响  

Effect of combination of cationic and nonionic surfactants on chemically mechanical polishing of barrier layer

作　　者：王建超 刘玉岭 牛新环 杨盛华 张凯 周佳凯 张辉辉 WANG Jian-chao;LIU Yu-ling;NIU Xin-huan;YANG Sheng-hua;ZHANG Kai;ZHOU Jia-kai;ZHANG Hui-hui

机构地区：[1]河北工业大学电子信息工程学院天津市电子材料与器件重点实验室,天津300130

出　　处：《电镀与涂饰》2018年第24期1119-1122,共4页Electroplating & Finishing

基　　金：河北省研究生创新资助项目(220056);国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省青年自然科学基金(F2015202267);国家自然科学基金(61504037)

摘　　要：通过化学机械抛光(CMP)对铜晶圆表面进行平坦化处理,研究了碱性抛光液中阳离子型表面活性剂FAOA和非离子型表面活性剂AEO复配对表面缺陷去除效果的影响。结果显示:抛光液中加入3～10 mL/L FAOA后,晶圆表面缺陷数量从大于30 000个降到1 100个以内。以6 mL/L AEO与3 mL/L FAOA复配时,CMP后晶圆表面的缺陷数量降至420个左右。Copper wafer was flattened through chemically mechanical polishing(CMP).The effect of the combination of FAOA(a cationic surfactant)and AEO(a nonionic surfactant)in alkaline polishing solution on removal efficiency of defects was studied.The results showed that the number of defects on wafer surface was reduced from over30000to less than1100when using a polishing solution containing3-10mL/L FAOA,while was reduced to about420in the presence of6mL/L AEO and3mL/L FAOA.

关 键 词：铜晶圆 阻挡层 化学机械抛光 表面活性剂 复配 

分 类 号：TN305.2[电子电信—物理电子学]