退火温度对磷掺杂ZnO结构及电学性质的影响  

Effect of Annealing Temperature on the Structure and Electrical Properties of Phosphor-doped ZnO

作　　者：解玉鹏[1] 王显德[1] XIE Yupeng;WANG Xiande(Jilin Institute of Chemical Technology,Jilin Jilin 132022)

机构地区：[1]吉林化工学院,吉林吉林132022

出　　处：《大学物理实验》2018年第6期5-8,共4页Physical Experiment of College

基　　金：吉林化工学院校级项目(2015053);吉林化工学院校级博士启动项目(2015129);吉林化工学院重大科技项目(2015011)

摘　　要：采用磁控溅射方法在石英衬底上制备ZnO薄膜,利用XRD对薄膜结构进行表征,SEM表征薄膜的表面形貌,讨论了退火温度对薄膜结构和电学性质的影响。结果表明,在750℃快退火后,磷受主被激活,得到了p型ZnO:P薄膜。ZnO films were prepared on quartz substrates by magnetron sputtering,the film structure was characterized by XRD,and the surface morphology of the films was demonstrated by SEM,and the effect of the annealing temperature on the electrical properties of the films was discussed.The results show that when the annealing temperature is 750℃,phosphorus is activated,p-type ZnO:P can be obtained.

关 键 词：磁控溅射 ZNO薄膜 P型 退火温度 

分 类 号：O4-047[理学—物理]