GaN太赫兹肖特基变容二极管倍频效率的研究  

Frequency doubling efficiency of GaN Schottky varactor diodes at terahertz-wave band

作　　者：代鲲鹏 张凯[1] 林罡[1] DAI Kunpeng;ZHANG Kai;LIN Gang(Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016

出　　处：《电子元件与材料》2018年第12期9-16,共8页Electronic Components And Materials

基　　金：国家重点研发计划(2018YFB0406602)

摘　　要：本文使用Sentaurus仿真工具对恒定掺杂和渐变掺杂两种典型掺杂的GaN太赫兹肖特基变容二极管进行了仿真研究。着重研究了两种掺杂方式下轻掺杂外延层掺杂浓度对变容二极管的C-V特性和倍频效率的影响。通过数字滤波求解输入频率300GHz幅值8V的正弦电压在偏置电压为-8V时产生的各频率分量,计算出具有不同掺杂浓度的GaN二极管的倍频效率。结果显示,在仿真掺杂浓度范围内并且不考虑外围电路影响的前提下,恒定掺杂的GaN变容二极管的二倍频效率最大值为32.5%,三倍频效率最大值为16.1%;而采用渐变掺杂方式能够显著提高二极管的倍频效率,在仿真的掺杂浓度范围内,二倍频与三倍频效率均最大能提高50%左右。通过理论推导和仿真结果的计算揭示了决定掺杂浓度与倍频效率之间的关系变化趋势的内在因素。本文的研究对GaN肖特基变容二极管的倍频效率进行了理论预测,并提出了渐变掺杂提高倍频效率的解决方案,这对后续的器件设计与制备具有指导意义。GaN Terahertz Schottky varactor diodes with constant doping and changed doping were simulated by Sentaurus simulation tool in this paper.The influence of the doping concentration on frequency doubling efficiency and C-V characteristics of the varactor was studied in two doping methods.The frequency doubling efficiency of GaN varactor diodes with different doping concentration was calculated by using a digital filter to obtain different frequency component when the frequency of the input voltage signal is 300 GHz,the amplitude is 8 V and the bias voltage is-8 V.The results show that the maximum send-harmonic conversion efficiency and third-harmonic conversion efficiency respectively achieves 32.5%and 16.1%when use constant doping method in the range of doping concentration simulated in this paper without considering the influence of the peripheral circuits.And both maximum send-harmonic conversion efficiency and third-harmonic conversion efficiency improved about 50%when use changed doping compared with the constant doping.The frequency doubling efficiency of GaN Schottky varactor diode is predicted theoretically,and the conclusion that diodes with changed doping can play an important role in increasing the efficiency will be helpful for designing and manufacturing devices later.

关 键 词：GAN 肖特基变容二极管 太赫兹 恒定掺杂 渐变掺杂 倍频效率 

分 类 号：TN771[电子电信—电路与系统]