检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:李震 张全壮 LI Zhen;ZHANG Quan-zhuang(Chongqing Energy Conservation Center, Chongqing 400044, China)
出 处:《人工晶体学报》2019年第1期28-33,共6页Journal of Synthetic Crystals
摘 要:本文采用四阶龙格-库塔法对地面分离结晶生长CdZnTe晶体过程中气液界面形状及熔体-坩埚气缝宽度进行了模拟,讨论了α_e+θ_c<180°和α_e+θ_c> 180°时影响气液界面形状及气缝宽度的控制因素。采用线性回归方法对模拟结果进行了分析,得到了地面条件下分离结晶稳定生长的影响因素和控制条件。即:只有满足熔体冷-热端气压调节与结晶速率成线性变化,才能维持稳定的分离结晶。The gas-liquid interface shape and gas gap width of detached solidification for CdZnTe on the ground were simulated by the fourth-order Runge-Kutta method.The influence factors of gas-liquid interface shape and gas gap width were discussed respectively whenαc+θc<180°andαc+θc >180°.The simulation results were analyzed by linear regression method,while the influencing factors and control conditions for stable detached solidification for CdZnTe under ground conditions were obtained.In order to maintain a stable detached solidification process,it is necessary to satisfy the law of linear change between the amount of air pressure regulation at the cold and hot ends as well as the crystallization rate.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.249