亚微米CMOS芯片与制程剖面结构  

Submicron CMOS Chips and Process Profile Structure

作　　者：潘桂忠 PAN Guizhong(Shanghai Belling Co.,Ltd,Shanghai 200233,China;The 771 Electronics Technique Institute of China Aerospace Science and Technology Research Academy,Shaanxi 710600,China)

机构地区：[1]上海贝岭股份有限公司,上海200233 [2]中国航天电子技术研究院第七七一研究所,陕西710600

出　　处：《集成电路应用》2019年第3期30-34,共5页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(2009.090027)

摘　　要：分析Submiron CMOS技术,使用双阱工艺,能够实现在高阻P型硅衬底上形成IC中各种元器件,并使之互连,实现所设计电路。采用芯片结构设计﹑工艺与制造技术,依该技术得到了芯片与制程结构。LV/HV Twin-Well BCD[B]technology(2)can realize BCD process compatible with low-voltage 5V and high-voltage 100~700 V(or higher)of MOS devices and lowvoltage 5V and high-voltage 30~100 V of bipolar devices.In order to facilitate the compatible integration of high and low voltage devices,HV LDMOS devices with bias gate structure with drift region and bipolar HV devices with double diffusions of boron and phosphorus in the source region are adopted.Different high voltage can be obtained by changing the length,width,junction depth and doping concentration of the drift region.The structure design,process and manufacturing technology of the chip are adopted,and the chip process structure is obtained by this technology.

关 键 词：集成电路制造 Submiron CMOS芯片 制程平面 剖面结构 

分 类 号：TN405[电子电信—微电子学与固体电子学]