InGaAs短波红外探测器的光电机理  

Photoelectric Mechanism of InGaAs Short Wavelength Infrared Detector

作　　者：邵海洋 邢怀中[1] SHAO Haiyang;XING Huaizhong(College of Science, Donghua University, Shanghai 201620, China)

机构地区：[1]东华大学理学院

出　　处：《东华大学学报（自然科学版）》2019年第1期158-162,共5页Journal of Donghua University(Natural Science)

摘　　要：利用ISE TCAD仿真软件,建立了铟镓砷(InGaAs)短波红外探测器表面漏电的二维模型。在背面照射方式下,模拟研究了InGaAs短波红外探测器的表面漏电对器件暗电流、总电流、量子效率和响应率的影响。研究结果表明,表面漏电会导致器件的暗电流和总电流增大,但响应率和量子效率会降低。由此可知,表面漏电是制约InGaAs短波红外探测器性能的重要影响因素,该研究结果为器件的设计与优化提供了理论依据。ISE TCAD simulation software was used to establish two dimensional surface leakage model of InGaAs short wavelength infrared detector. The effects of surface leakage on the dark current, total current, quantum efficiency and responsivity of InGaAs short wavelength infrared detector were investigated in the backside illumination configuration. The results illustrate that surface leakage increases the dark current and total current, but decreases the responsivity as well as quantum efficiency of device. It is demonstrated that surface leakage has a significant influence on the performance of InGaAs short wavelength infrared detector. Above all, the result provides guidance for the design and optimization of device.

关 键 词：表面漏电 InGaAs短波红外探测器 暗电流 响应率 量子效率 

分 类 号：O474[理学—半导体物理]