一种用于SKA的SiGe宽带低噪声放大器  

A wideband SiGe low noise amplifier for SKA

作　　者：陈涛 庞东伟 桑磊[1] 曹锐[2] CHEN Tao;PANG Dongwei;SANG Lei;CAO Rui(Academy of Photoelectric Technology,Hefei University of Technology,Hefei 230009,China;No.38 Research Institute,China Electronics Technology Group Corporation,Hefei 230088,China)

机构地区：[1]合肥工业大学光电技术研究院,安徽合肥230009 [2]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《合肥工业大学学报（自然科学版）》2019年第2期211-214,236,共5页Journal of Hefei University of Technology：Natural Science

基　　金：国家自然科学基金资助项目(61401143)

摘　　要：文章设计了一款用于平方公里阵列(Square Kilometer Array,SKA)接收前端的异质结双极型晶体管(heterojunction bipolar transistor,HBT)低噪声放大器。放大器的第1级在反馈电感的基础上采用电容负载,利用晶体管寄生电容拓展带宽;第2级利用发射极跟随放大器实现宽带内稳定的输出阻抗。采用HHNEC 180 nm SiGe工艺对电路进行仿真,版图仿真结果表明,在0.5～1.5 GHz内,噪声系数低于1.16 dB,最小噪声系数为0.76 dB,S_(21)大于15 dB。整个电路尺寸为1.1 mm×0.98 mm(含焊盘),在3.3 V供电电压下,功耗为34 mW。A heterojunction bipolar transistor(HBT) wideband low noise amplifier(LNA) is designed to be applied in the receiver for Square Kilometer Array(SKA) radio telescope.The first stage of the LNA adopts capacitive load to extend the bandwidth using parasitic capacitances of the transistor,and common-collector amplifier is selected at the second stage for output match.The circuit is simulated using HHNEC 180 nm SiGe process.The simulation results show that in the range of 0.5-1.5 GHz, the LNA achieves sub-1.16 dB noise figure(NF),and the gain(S21) is more than 15 dB and the minimum NF is 0.76 dB.The dimension of the LNA is 1.1 mm×0.98 mm(including pad) while consuming 34 mW from a 3.3 V supply.

关 键 词：宽带 超低噪声 SIGE工艺 低噪声放大器 平方公里阵列(SKA) 

分 类 号：TN722.33[电子电信—电路与系统]