高温工作InAlSb的MBE生长及器件性能研究  

MBE growth and device performance of high operating temperature InAlSb

作　　者：尚林涛[1] 温涛[1] 王经纬[1] 刘铭[1] 周朋[1] 邢伟荣[1] 沈宝玉[1] SHANG Lin-tao;WEN Tao;WANG Jing-wei;LIU Ming;ZHOU Peng;XING Wei-rong;SHEN Bao-yu(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2019年第3期329-335,共7页Laser & Infrared

摘　　要：接近室温的更高工作温度是第三代红外探测器发展的重要方向。本文论述了用MBE在InSb(100)衬底上外延生长制备P-i-N型三元In_(1-x)Al_xSb薄膜合金材料,并通过制备单元器件进行了验证。采用RHEED振荡和X射线双晶衍射对In_(1-x)Al_xSb薄膜的Al组分进行了调控和检测。5.3μm厚薄膜的FWHM≈50 arcsec,Al组分约1.9%。10μm×10μm原子力表面粗糙度RMS≈0.6 nm。制备的单元器件获得了预期的理想效果,为下一步面阵焦平面的制备奠定了基础。Higher operating temperature close to room temperature is an important direction for the development of third-generation infrared detectors.In this paper,the P-i-N ternary In1-xAlxSb thin film alloy material was epitaxially grown on InSb(100) substrate by MBE and verified bypreparedunit devices.The Al composition of the In1-xAlxSb film was conditioned and detected by RHEED oscillation and X-ray double crystal diffraction.5.3 μm thick thin film FWHM isabout 50 arcsec,Al componentsis about 1.9%.10 μm×10 μm atomic force surface roughness RMS is about 0.6 nm.The prepared unit device obtained the expected ideal effect and laid the foundation for the preparation of the next areafocal plane.

关 键 词：INSB InAlSb 高温工作 MBE 暗电流 

分 类 号：TN213[电子电信—物理电子学]