(100)/(111)面金刚石膜抗氧等离子刻蚀能力  

Resistance abilities of (100)/(111)-faceted diamond films against oxygen plasma etching

作　　者：孙祁 汪建华[2] 程翀[1] 陈祥磊[1] 吴荣俊[1] 刘单[1] 祝娇[1] SUN Qi;WANG Jianhua;CHENG Chong;CHEN Xianglei;WU Rongjun;LIU Dan;ZHU Jiao(Wuhan Second Ship Design and Research Institute,Wuhan 430064,China;School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430070,China)

机构地区：[1]武汉第二船舶设计研究所,武汉430064 [2]武汉工程大学材料科学与工程学院,武汉430070

出　　处：《航空材料学报》2019年第2期55-60,共6页Journal of Aeronautical Materials

摘　　要：使用微波等离子体技术(microwave plasma chemical vapor deposition,MPCVD)对膜厚100μm的(100)和(111)晶面金刚石膜进行刻蚀处理,研究其抗氧等离子体的行为。结果表明:(100)晶面刻蚀首先发生在晶棱晶界处,而(111)晶面金刚石的刻蚀首先发生在晶面处;30 min刻蚀后,(100)面金刚石有明显晶面显现,(111)面金刚石膜晶面不明显;60 min刻蚀后,(100)和(111)晶面金刚石膜的择优取向消失;(100)晶面金刚石特征峰的半高宽值(full width at the half maximum,FWHM)由刻蚀前的8.51 cm^(–1)上升至刻蚀后的12.48 cm^(–1),(111)晶面金刚石FWHM值由8.74 cm^(–1)上升至148.49 cm^(–1);(100)晶面金刚石膜刻蚀速率在40 min时为0.35μm/min,60 min时上升至1.34μm/min;刻蚀前期,(100)晶面金刚石膜具有更好的抗氧等离子体刻蚀能力,刻蚀后期其抗刻蚀能力与(111)晶面金刚石膜相似。The resistance abilities of(100)and(111)-faceted diamond films against oxygen plasma,100μm as film thickness,were investigated by the microwave power chemical vapor deposition(MPCVD)technique.The results indicate that the preferred etching points of the(100)-faceted diamond films are located at the grain boundaries and the preferred etching points of the(111)-faceted diamond films are located at the crystal surfaces.After 30 minutes etching,the(100)-faceted crystal can still be obviously shown while the(111)-faceted crystal is unobvious.After 60 minutes etching,the preferential orientations of(100)-faceted and(111)-faceted diamond films both are disappeared.The FWHM value of the(100)-faceted diamond films is increased from 8.51cm^-1 to 12.48cm^-1 and the FWHM value of the(111)-faceted diamond films is increased from 8.74cm^-1 to 148.49cm^-1 when the etching time is 60 minutes.The etching rate of the(100)-faceted diamond film is 0.35μm/min when the etching time is 40 minutes and it is increased to 1.34μm/min when the etching time is 60 minutes.At early stage,the(100)-faceted diamond film presented better resistance ability than the(111)-faceted diamond film against the oxygen plasma etching.But the resistance abilities to the plasma etching of the(100)and the(111)-faceted diamond films are similar when the etching time is 60 minutes.

关 键 词：金刚石膜 (100)晶面 (111)晶面 氧等离子体 刻蚀 

分 类 号：O484[理学—固体物理]